SI8817DB Specs and Replacement
Type Designator: SI8817DB
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
Package: MICRO-FOOT
SI8817DB substitution
- MOSFET ⓘ Cross-Reference Search
SI8817DB datasheet
Detailed specifications: SI8805EDB, SI8806DB, SI8808DB, SI8809EDB, SI8810, SI8810EDB, SI8812DB, SI8816EDB, IRF9540N, SI8819EDB, SI8821EDB, SI8822, SI8851EDB, SI9407BDY, SI9410BDY, SI9424BDY, SI9424DY
Keywords - SI8817DB MOSFET specs
SI8817DB cross reference
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SI8817DB replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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