SI8851EDB Specs and Replacement
Type Designator: SI8851EDB
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.66 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 7.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 640 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: MICRO-FOOT-2.4X2
SI8851EDB substitution
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SI8851EDB datasheet
Detailed specifications: SI8810 , SI8810EDB , SI8812DB , SI8816EDB , SI8817DB , SI8819EDB , SI8821EDB , SI8822 , K3569 , SI9407BDY , SI9410BDY , SI9424BDY , SI9424DY , SI9433BDY , SI9434BDY , SI9926CDY , SI9933CDY .
Keywords - SI8851EDB MOSFET specs
SI8851EDB cross reference
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SI8851EDB substitution
SI8851EDB replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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