SI9407BDY Specs and Replacement
Type Designator: SI9407BDY
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SO-8
SI9407BDY substitution
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SI9407BDY datasheet
Detailed specifications: SI8810EDB , SI8812DB , SI8816EDB , SI8817DB , SI8819EDB , SI8821EDB , SI8822 , SI8851EDB , IRFP260 , SI9410BDY , SI9424BDY , SI9424DY , SI9433BDY , SI9434BDY , SI9926CDY , SI9933CDY , SI9934BDY .
Keywords - SI9407BDY MOSFET specs
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