MDD4N25RH MOSFET. Datasheet pdf. Equivalent
Type Designator: MDD4N25RH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.2 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 32 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.75 Ohm
Package: TO-252
MDD4N25RH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDD4N25RH Datasheet (PDF)
mdd4n25rh.pdf
MDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75 General Description Features The MDD4N25 uses advanced Magnachips V = 250V DSMOSFET Technology, which provides low on-state I = 3.0A Dresistance, high switching performance and RDS(ON) 1.75 @VGS = 10V excellent quality. MDD4N25 is suitable device for SMPS, HID and Applications general purpose applicatio
mdd4n20yrh.pdf
MDD4N20YN-Channel MOSFET 200V, 3.0A, 1.35General Description Features The MDD4N20Y uses advanced Magnachips VDS = 200V MOSFET Technology, which provides low on-state ID = 3.0A @VGS = 10V resistance, high switching performance and RDS(ON) 1.35 @VGS = 10V excellent quality. MDD4N20Y is suitable device for SMPS, high Speed switching and general purpose applicat
mdd4n60brh mdi4n60bth.pdf
MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0General Description Features The MDD/I4N60B uses advanced Magnachips MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 3.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 2.0 @ VGS = 10V MDD/I4N60B is suitable device for SMPS, HID and general Applications
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: MCH3484
History: MCH3484
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