MDF10N50TH MOSFET Datasheet: N-Ch, 500V, 6.2A. Full specification with pinout and replacement list

MDF10N50TH Specs and Replacement

Type Designator: MDF10N50TH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 108 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO-220F

MDF10N50TH substitution

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MDF10N50TH datasheet

..1. Size:748K magnachip
mdf10n50th.pdf pdf_icon

MDF10N50 N-Channel MOSFET 500V, 10 A, 0.75 General Description Features The MDF10N50 uses advanced MagnaChip s MOSFET V = 500V DS Technology, which provides low on-state resistance, high I = 10.0A @ V = 10V D GS switching performance and excellent quality. R 0.75 @ V = 10V DS(ON) GS MDF10N50 is suitable device for SMPS, high Speed Applications switching and gene... See More ⇒

8.1. Size:780K magnachip
mdf10n60bth.pdf pdf_icon

MDF10N60B N-Channel MOSFET 600V, 10A, 0.7 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 10A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.7 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed ... See More ⇒

8.2. Size:881K magnachip
mdf10n65bth.pdf pdf_icon

MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0 General Description Features The MDF10N65B MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 10.0A @ V = 10V D GS state resistance, high switching performance and excellent R 1.0 @ V = 10V DS(ON) GS quality. Applications MDF10N65B is suitable device for ... See More ⇒

8.3. Size:1143K magnachip
mdf10n60gth mdp10n60gth.pdf pdf_icon

MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- VDS = 660V @ Tjmax state resistance, high switching performance and excellent ID = 10A @ VGS = 10V quality. RDS(ON) 0.7 @ VGS = 10V Applications These devices are suitabl... See More ⇒