MDF4N60TH
MOSFET. Datasheet pdf. Equivalent
Type Designator: MDF4N60TH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 34.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 4.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12.1
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 58
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2
Ohm
Package:
TO-220F
MDF4N60TH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDF4N60TH
Datasheet (PDF)
..1. Size:1239K magnachip
mdf4n60th mdf4n60tp mdp4n60th mdp4n60tp.pdf 
MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GSstate resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GSquality. Applications These devices are suitable
7.1. Size:845K magnachip
mdf4n60dth.pdf
MDF4N60D N-Channel MOSFET 600V, 4.0A, 2.2General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed
7.2. Size:943K magnachip
mdf4n60bth.pdf
MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GSstate resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device
8.1. Size:758K magnachip
mdf4n65bth.pdf
MDF4N65B N-Channel MOSFET 650V, 4.0A, 2.2General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChips MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed
Datasheet: MDF18N50BTH
, MDF1903TH
, MDF2N60BTH
, MDF2N60TH
, MDF2N60TP
, MDF3752TH
, MDF4N60BTH
, MDF4N60DTH
, IRFP250N
, MDF4N60TP
, MDF4N65BTH
, MDF5N50BTH
, MDF5N50FBTH
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, MDF6N60BTH
, MDF6N60TH
.
