All MOSFET. MDF4N60TP Datasheet

 

MDF4N60TP Datasheet and Replacement


   Type Designator: MDF4N60TP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 4.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 12.1 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-220F
 

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MDF4N60TP Datasheet (PDF)

 ..1. Size:1239K  magnachip
mdf4n60th mdf4n60tp mdp4n60th mdp4n60tp.pdf pdf_icon

MDF4N60TP

MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GSstate resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GSquality. Applications These devices are suitable

 7.1. Size:845K  magnachip
mdf4n60dth.pdf pdf_icon

MDF4N60TP

MDF4N60D N-Channel MOSFET 600V, 4.0A, 2.2General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

 7.2. Size:943K  magnachip
mdf4n60bth.pdf pdf_icon

MDF4N60TP

MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GSstate resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device

 8.1. Size:758K  magnachip
mdf4n65bth.pdf pdf_icon

MDF4N60TP

MDF4N65B N-Channel MOSFET 650V, 4.0A, 2.2General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChips MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: MPVD4N65F | CS640F

Keywords - MDF4N60TP MOSFET datasheet

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