All MOSFET. MDF5N50BTH Datasheet

 

MDF5N50BTH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDF5N50BTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.5 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 69 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220F

 MDF5N50BTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDF5N50BTH Datasheet (PDF)

 ..1. Size:1146K  magnachip
mdf5n50bth mdp5n50bth.pdf

MDF5N50BTH
MDF5N50BTH

MDP5N50B / MDF5N50B N-Channel MOSFET 500V, 5.0 A, 1.4General Description Features The MDP/F5N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 5.0A @VGS = 10V resistance, high switching performance and RDS(ON) 1.4 @VGS = 10V excellent quality. MDP/F5N50B is suitable device for SMPS, HID and Applications general purpose

 7.1. Size:1034K  magnachip
mdf5n50zth mdp5n50zth.pdf

MDF5N50BTH
MDF5N50BTH

MDP5N50Z / MDF5N50Z N-Channel MOSFET 500V, 5A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 500V DSMagnaChips MOSFET Technology, which provides low on- I = 5.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device fo

 7.2. Size:1047K  magnachip
mdf5n50fth mdp5n50fth.pdf

MDF5N50BTH
MDF5N50BTH

MDP5N50F / MDF5N50F N-Channel MOSFET 500V, 4.5 A, 1.55 General Description Features The MDP5N50F/MDF5N50F use advanced Magnachips V = 500V DSMOSFET Technology, which provides low on-state resistance, I = 4.5A @V = 10V D GShigh switching performance and excellent quality. RDS(ON) 1.55 @VGS = 10V MDP5N50F/MDF5N50F are suitable device for SMPS, HID and genera

 7.3. Size:749K  magnachip
mdf5n50fbth.pdf

MDF5N50BTH
MDF5N50BTH

MDF5N50FB N-Channel MOSFET 500V, 4.5 A, 1.55General Description Features The MDF5N50FB uses advanced MagnaChips MOSFET VDS = 500V Technology, which provides low on-state resistance, high ID = 4.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 1.55 @ VGS = 10V MDF5N50FB is suitable device for SMPS, high Speed Applications switching

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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