All MOSFET. MDF6N60TH Datasheet

 

MDF6N60TH Datasheet and Replacement


   Type Designator: MDF6N60TH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23.2 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220F
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MDF6N60TH Datasheet (PDF)

 ..1. Size:1095K  magnachip
mdf6n60th mdp6n60th.pdf pdf_icon

MDF6N60TH

MDP6N60/MDF6N60 N-Channel MOSFET 600V, 6A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 6.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for SM

 7.1. Size:808K  magnachip
mdf6n60bth.pdf pdf_icon

MDF6N60TH

MDF6N60B N-Channel MOSFET 600V, 6A, 1.45General Description Features The MDF6N60B uses advanced MagnaChips MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 6.0A @ VGS = 10V switching performance and excellent quality. RDS(ON) 1.4 @ VGS = 10V MDF6N60B is suitable device for SMPS, high Speed Applications switch

 8.1. Size:784K  magnachip
mdf6n65bth.pdf pdf_icon

MDF6N60TH

MDF6N65B N-Channel MOSFET 650V, 6.0A, 1.45General Description Features The MDF6N65B use advanced Magnachips VDS = 650V MOSFET Technology, which provides low on-state @VGS = 10V ID = 6.0A resistance, high switching performance and @VGS = 10V RDS(ON) 1.45 excellent quality. MDF6N65B is suitable device for SMPS, HID and general purpose applications. Applications

 9.1. Size:193K  motorola
mmdf6n02hdrev1.pdf pdf_icon

MDF6N60TH

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF6N02HD/DDesigner's Data SheetMMDF6N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect Transistors DUAL TMOSPOWER MOSFETDual HDTMOS devices are an advanced series of power6.0 AMPERESMOSFETs which utilize Motorolas High Cell Density TMOS20 VOLTSprocess. Th

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: STD120N4LF6 | NTJD5121N | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

Keywords - MDF6N60TH MOSFET datasheet

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