All MOSFET. MDP12N50FTH Datasheet

 

MDP12N50FTH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDP12N50FTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 165 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 11.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO-220

 MDP12N50FTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDP12N50FTH Datasheet (PDF)

 ..1. Size:1068K  magnachip
 mdf12n50fth mdp12n50fth.pdf

MDP12N50FTH MDP12N50FTH

MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7 General Description Features These N-channel MOSFET are produced using advanced V = 500V DSMagnaChips MOSFET Technology, which provides low on- I = 11.5A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.7 @ V = 10V DS(ON) GSquality. Applications These devices are suitable devic

 6.1. Size:759K  magnachip
 mdp12n50th.pdf

MDP12N50FTH MDP12N50FTH

MDP12N50 N-Channel MOSFET 500V, 11.5 A, 0.65 General Description Features The MDP12N50 uses advanced MagnaChips MOSFET V = 500V DSTechnology, which provides low on-state resistance, high I = 11.5A @ V = 10V D GSswitching performance and excellent quality. R 0.65 @ V = 10V DS(ON) GSMDP12N50 is suitable device for SMPS, high Speed Applications switching and ge

 6.2. Size:1149K  magnachip
 mdf12n50bth mdp12n50bth.pdf

MDP12N50FTH MDP12N50FTH

MDP12N50B / MDF12N50B N-Channel MOSFET 500V, 11.5A, 0.65General Description Features The MDP/F12N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 11.5A @VGS = 10V resistance, high switching performance and RDS(ON) 0.65 @VGS = 10V excellent quality. MDP/F12N50B is suitable device for SMPS, high Applications Speed switc

 6.3. Size:288K  inchange semiconductor
 mdp12n50bth.pdf

MDP12N50FTH MDP12N50FTH

isc N-Channel MOSFET Transistor MDP12N50BTHFEATURESDrain Current : I = 11.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

 6.4. Size:288K  inchange semiconductor
 mdp12n50th.pdf

MDP12N50FTH MDP12N50FTH

isc N-Channel MOSFET Transistor MDP12N50THFEATURESDrain Current : I = 11.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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