MDP7N50BTH PDF and Equivalents Search

 

MDP7N50BTH Specs and Replacement

Type Designator: MDP7N50BTH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 114 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 97 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-220

MDP7N50BTH substitution

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MDP7N50BTH datasheet

 ..1. Size:1175K  magnachip
mdf7n50bth mdp7n50bth.pdf pdf_icon

MDP7N50BTH

MDP7N50B / MDF7N50B N-Channel MOSFET 500V, 7.0 A, 0.9 General Description Features The MDP/F7N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 7.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. MDP/F7N50B is suitable device for SMPS, high Applications Speed switching an... See More ⇒

 ..2. Size:288K  inchange semiconductor
mdp7n50bth.pdf pdf_icon

MDP7N50BTH

isc N-Channel MOSFET Transistor MDP7N50BTH FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 7.1. Size:1196K  magnachip
mdp7n50.pdf pdf_icon

MDP7N50BTH

MDP7N50 N-Channel MOSFET 500V, 7.0 A, 0.9 General Description Features The MDP7N50 uses advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on- I = 7.0A @V = 10V D GS state resistance, high switching performance R ... See More ⇒

 7.2. Size:288K  inchange semiconductor
mdp7n50th.pdf pdf_icon

MDP7N50BTH

isc N-Channel MOSFET Transistor MDP7N50TH FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

Detailed specifications: MDP2N60TH, MDP2N60TP, MDP4N60TH, MDP4N60TP, MDP5N50BTH, MDP5N50FTH, MDP5N50ZTH, MDP6N60TH, IRFP064N, MDP7N60BTH, MDP7N60TH, MDP8N60TH, MDP9N50BTH, MDP9N60TH, MDQ16N50GTH, MDQ16N50GTP, MDQ18N50GTH

Keywords - MDP7N50BTH MOSFET specs

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