MDP7N50BTH
MOSFET. Datasheet pdf. Equivalent
Type Designator: MDP7N50BTH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 114
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14.9
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 97
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9
Ohm
Package:
TO-220
MDP7N50BTH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDP7N50BTH
Datasheet (PDF)
..1. Size:1175K magnachip
mdf7n50bth mdp7n50bth.pdf 
MDP7N50B / MDF7N50B N-Channel MOSFET 500V, 7.0 A, 0.9General Description Features The MDP/F7N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 7.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. MDP/F7N50B is suitable device for SMPS, high Applications Speed switching an
..2. Size:288K inchange semiconductor
mdp7n50bth.pdf
isc N-Channel MOSFET Transistor MDP7N50BTHFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
7.1. Size:1196K magnachip
mdp7n50.pdf
MDP7N50 N-Channel MOSFET 500V, 7.0 A, 0.9 General Description Features The MDP7N50 uses advanced Magnachips V = 500V DS MOSFET Technology, which provides low on- I = 7.0A @V = 10V D GS state resistance, high switching performance R
7.2. Size:288K inchange semiconductor
mdp7n50th.pdf
isc N-Channel MOSFET Transistor MDP7N50THFEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
9.1. Size:729K magnachip
mdp7n60th.pdf
MDP7N60 N-Channel MOSFET 600V, 7A, 1.15 General Description Features The MDP7N60 uses advanced MagnaChips MOSFET V = 600V DSTechnology, which provides low on-state resistance, high V = 660V @ T DS jmaxswitching performance and excellent quality. I = 7.0A @ V = 10V D GS RDS(ON) 1.15 @ VGS = 10V MDP7N60 is suitable device for SMPS, high Speed switching Applica
9.2. Size:1118K magnachip
mdf7n60bth mdp7n60bth.pdf
MDP7N60B / MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- V = 660V @ T DS jmaxstate resistance, high switching performance and excellent I = 7.0A @ V = 10V D GSquality. RDS(ON) 1.15 @ VGS = 10V Applications These devices
9.3. Size:289K inchange semiconductor
mdp7n60th.pdf
isc N-Channel MOSFET Transistor MDP7N60THFEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.15(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
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