MDS1521URH MOSFET Datasheet: N-Ch, 30V, 18.8A. Full specification with pinout and replacement list

MDS1521URH Specs and Replacement

Type Designator: MDS1521URH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 486 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: SOIC-8

MDS1521URH substitution

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MDS1521URH datasheet

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MDS1526 Single N-channel Trench MOSFET 30V, 16.1A, 11.0m General Description Features The MDS1526 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 16.1A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1526 is suitable for DC/DC converter and ... See More ⇒

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MDS1528 Single N-channel Trench MOSFET 30V, 11.9A, 18.8m General Description Features The MDS1528 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 11.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1528 is suitable for DC/DC converter and ... See More ⇒

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MDS1525 Single N-channel Trench MOSFET 30V, 16.9A, 10.1m General Description Features The MDS1525 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 16.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1525 is suitable for DC/DC converter and ... See More ⇒