MDS1655URH MOSFET Datasheet: N-Ch, 30V, 11A. Full specification with pinout and replacement list

MDS1655URH Specs and Replacement

Type Designator: MDS1655URH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 121 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm

Package: SOIC-8L

MDS1655URH substitution

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MDS1655URH datasheet

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MDS1655 Single N-channel Trench MOSFET 30V, 11A, 17.5m General Description Features The MDS1655 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 11A @VGS = 10V resistance, fast switching performance and excellent R DS(ON) quality. MDS1655 is suitable device for DC-DC ... See More ⇒

8.1. Size:729K magnachip
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MDS1654 Single N-Channel Trench MOSFET 30V, 15A, 9.5m General Description Features The MDS1654 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 15A @VGS = 10V high switching performance and excellent reliability. RDS(ON) ... See More ⇒

8.2. Size:641K magnachip
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MDS1651 Single N-Channel Trench MOSFET 30V, 11.6A, 17m General Description Features The MDS1651 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 11.6A@VGS = 10V high switching performance and excellent reliability. RDS(ON) ... See More ⇒

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Preliminary Subject to change without notice MDS1652E Single N-channel Trench MOSFET 30V, 16A, 5.0m General Description Features The MDS1652E uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides high performance in on-state I = 16A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. Excelle... See More ⇒