All MOSFET. MDU5692SVRH Datasheet

 

MDU5692SVRH Datasheet and Replacement


   Type Designator: MDU5692SVRH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11.3 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: PDFN56
 

 MDU5692SVRH substitution

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MDU5692SVRH Datasheet (PDF)

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MDU5692SVRH

MDU5692S Dual Asymmetric N-channel Trench MOSFET 30V General Description Features The MDU5692S uses advanced MagnaChips MOSFET FET1 FET2 Technology, which provides high performance in on-state V = 30V V = 30V DS DSresistance, fast switching performance and excellent I = 52A I = 100A @V = 10V D D GSquality. MDU5692S is suitable for DC/DC converter and R DS(ON)

 8.1. Size:1582K  magnachip
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MDU5692SVRH

MDU5693 Dual Asymmetric N-channel Trench MOSFET 30V General Description Features The MDU5693 uses advanced MagnaChips MOSFET FET1 FET2 Technology, which provides high performance in on-state V = 30V V = 30V DS DSresistance, fast switching performance and excellent I = 52A I = 100A @V = 10V D D GSquality. MDU5693 is suitable for DC/DC converter and R DS(ON)ge

Datasheet: MDU1721VRH , MDU1722VRH , MDU1931VRH , MDU2511SVRH , MDU3603RH , MDU3605URH , MDU5512URH , MDU5593SVRH , IRFZ24N , MDU5693VRH , MDV1522URH , MDV1523URH , MDV1524URH , MDV1525URH , MDV1526URH , MDV1527URH , MDV1528URH .

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