MSD30P06 MOSFET Datasheet: P-Ch, 60V, 28A. Full specification with pinout and replacement list

MSD30P06 Specs and Replacement

Type Designator: MSD30P06

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm

Package: TO-252

MSD30P06 substitution

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MSD30P06 datasheet

..1. Size:550K bruckewell
msd30p06.pdf pdf_icon

MSD30P06 P-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cord... See More ⇒

9.1. Size:1194K bruckewell
msd30n06.pdf pdf_icon

Bruckewell Technology Corp., Ltd. MSD30N06 N-Channel 60-V (D-S) MOSFET FEATURES Low RDS (on) trench technology Low thermal impedance Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Notes a. Surface Mount... See More ⇒

Detailed specifications: TK10A60W, MSD20N06, MSD20N10, MSD23N22, MSD23N58, MSD2N60, MSD2N70, MSD30N06, RU7088R, MSD40P03, MSD4N40, MSD4N60, MSD4N70, MSD50N03, MSD50N10, MSD80N03, MSE20N06N