MSD30P06 Datasheet and Replacement
Type Designator: MSD30P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 28 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 10 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
Package: TO-252
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MSD30P06 Datasheet (PDF)
msd30p06.pdf
MSD30P06 P-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cord
msd30n06.pdf
Bruckewell Technology Corp., Ltd. MSD30N06 N-Channel 60-V (D-S) MOSFET FEATURES Low RDS (on) trench technology Low thermal impedance Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Notes a. Surface Mount
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WMM11N80M3 | FDMS9620S
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History: WMM11N80M3 | FDMS9620S
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