All MOSFET. MSD30P06 Datasheet

 

MSD30P06 Datasheet and Replacement


   Type Designator: MSD30P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
   Package: TO-252
 

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MSD30P06 Datasheet (PDF)

 ..1. Size:550K  bruckewell
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MSD30P06

MSD30P06 P-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cord

 9.1. Size:1194K  bruckewell
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MSD30P06

Bruckewell Technology Corp., Ltd. MSD30N06 N-Channel 60-V (D-S) MOSFET FEATURES Low RDS (on) trench technology Low thermal impedance Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Notes a. Surface Mount

Datasheet: TK10A60W , MSD20N06 , MSD20N10 , MSD23N22 , MSD23N58 , MSD2N60 , MSD2N70 , MSD30N06 , MMD60R360PRH , MSD40P03 , MSD4N40 , MSD4N60 , MSD4N70 , MSD50N03 , MSD50N10 , MSD80N03 , MSE20N06N .

History: STB26NM60N | 9N90C | BLP042N10G-P | MTD5P06VT4 | 2SK3575 | DAMI560N100 | IPW65R280C6

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