MSF18N50 PDF and Equivalents Search

 

MSF18N50 Specs and Replacement


   Type Designator: MSF18N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 235 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO-220F
 

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MSF18N50 datasheet

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 msf18n50.pdf pdf_icon

MSF18N50

MSF18N50 500V N-Channel MOSFET Description The MSF18N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. he TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrins... See More ⇒

Detailed specifications: MSF10N80 , MSF10N80A , MSF12N60 , MSF12N65 , MSF13N50 , MSF14N60 , MSF15N60 , MSF16N50 , IRLZ44N , MSF20N50 , MSF2N40 , MSF2N60 , MSF2N70 , MSF3N80 , MSF4N60 , MSF4N60L , MSF4N65 .

History: RFL1N08 | IPI50R399CP

Keywords - MSF18N50 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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