All MOSFET. MSF2N60 Datasheet

 

MSF2N60 Datasheet and Replacement


   Type Designator: MSF2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm
   Package: TO-220F
 

 MSF2N60 substitution

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MSF2N60 Datasheet (PDF)

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MSF2N60

MSF2N60 600V N-Channel MOSFET Description The MSF2N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem

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msf2n70.pdf pdf_icon

MSF2N60

MSF2N70 700V N-Channel MOSFET Description The MSF2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Technol

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msf2n40.pdf pdf_icon

MSF2N60

MSF2N40 400V N-Channel MOSFET Description The MSF2N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features BVDSS=400V typically @ Tj=150C Low On

Datasheet: MSF12N65 , MSF13N50 , MSF14N60 , MSF15N60 , MSF16N50 , MSF18N50 , MSF20N50 , MSF2N40 , 10N60 , MSF2N70 , MSF3N80 , MSF4N60 , MSF4N60L , MSF4N65 , MSF5N50 , MSF5N60 , MSF6N40 .

History: TSM75N75CZ | AP4543GEH-HF | PDN2309S | NCE60N1K0I

Keywords - MSF2N60 MOSFET datasheet

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