All MOSFET. MSF2N60 Datasheet

 

MSF2N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSF2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm
   Package: TO-220F

 MSF2N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSF2N60 Datasheet (PDF)

 ..1. Size:923K  bruckewell
 msf2n60.pdf

MSF2N60 MSF2N60

MSF2N60 600V N-Channel MOSFET Description The MSF2N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem

 9.1. Size:1069K  bruckewell
 msf2n70.pdf

MSF2N60 MSF2N60

MSF2N70 700V N-Channel MOSFET Description The MSF2N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features 100% EAS Test Rugged Gate Oxide Technol

 9.2. Size:922K  bruckewell
 msf2n40.pdf

MSF2N60 MSF2N60

MSF2N40 400V N-Channel MOSFET Description The MSF2N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features BVDSS=400V typically @ Tj=150C Low On

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