All MOSFET. MSU5N60D Datasheet

 

MSU5N60D Datasheet and Replacement


   Type Designator: MSU5N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-252
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MSU5N60D Datasheet (PDF)

 7.1. Size:475K  taitron
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MSU5N60D

600V/4.5A POWER MOSFET (N-Channel) MSU5N60 600V/4.5A Power MOSFET (N-Channel) General Description MSU5N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati

 9.1. Size:595K  bruckewell
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MSU5N60D

MSU5N50 500V N-Channel MOSFET Description The MSU5N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Originative New Design Rugged Gate Oxide

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SWP3205 | AON6794 | CED05N8 | IRLR024 | SWU6N65K | MC08N005C | BL10N70-A

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