MTBA5C10V8 Datasheet. Specs and Replacement

Type Designator: MTBA5C10V8  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.6 nS

Cossⓘ - Output Capacitance: 31 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm

Package: DFN3X3

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MTBA5C10V8 datasheet

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MTBA5C10V8

Spec. No. C744V8 Issued Date 2014.11.03 CYStech Electronics Corp. Revised Date Page No. 1/13 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTBA5C10V8 BVDSS 100V -100V ID@VGS=10V(-10V) 2.3A -1.7A RDSON@VGS=10V(-10V) typ. 126.5m 216m RDSON@VGS=4.5V(-4.5V) typ. 130m 227m Features Simple drive requirement Low on-resistance Fast... See More ⇒

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mtba5c10q8.pdf pdf_icon

MTBA5C10V8

Spec. No. C744Q8 Issued Date 2009.10.16 CYStech Electronics Corp. Revised Date 2011.10.03 Page No. 1/10 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTBA5C10Q8 BVDSS 100V -100V ID 3A -2.5A RDSON(MAX.) 150m 250m Description The MTBA5C10Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the d... See More ⇒

 6.2. Size:374K  cystek
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MTBA5C10V8

Spec. No. C744Q8 Issued Date 2009.10.16 CYStech Electronics Corp. Revised Date 2014.01.03 Page No. 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTBA5C10AQ8 BVDSS 100V -100V ID 2.4A -2.2A Description RDSON(MAX.) 150m 220m The MTBA5C10AQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the... See More ⇒

 9.1. Size:349K  cystek
mtba5n10fp.pdf pdf_icon

MTBA5C10V8

Spec. No. C731FP Issued Date 2012.12.06 CYStech Electronics Corp. Revised Date Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTBA5N10FP ID 10A RDS(ON)@VGS=10V, ID=10A 151 m (typ) RDS(ON)@VGS=4.5V, ID=10A 165 m (typ) Description The MTBA5N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swit... See More ⇒

Detailed specifications: MTB50P03HDLG, MTB50P03HDLT4, MTB50P03HDLT4G, MTB5D0P03J3, MTB5D0P03Q8, MTB60P15H8, MTB6D0N03BH8, MTB75N05HDT4, 7N65, MTBA6C12Q8, MTBA6C15J4, MTBA6C15Q8, APM1105NU, APM1106K, APM1110K, APM1110NU, APM1110NUB

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