IRFS720 Datasheet and Replacement

   Type Designator: IRFS720
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 12.5 nC
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 59.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO220F

IRFS720 substitution

- MOSFET ⓘ Cross-Reference Search

IRFS720 Datasheet (PDF)

..1. Size:295K 1
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..2. Size:284K 1
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0.1. Size:880K 1
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November 2001IRF720B/IRFS720B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

0.2. Size:501K samsung
irfs720a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 1.408 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

9.1. Size:304K 1
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9.2. Size:286K 1
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9.3. Size:115K 1
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9.4. Size:309K 1
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9.5. Size:278K 1
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IRFS750AAdvanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.4 A Improved Gate Charge Extended Safe Operating AreaTO-220F Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbo

9.6. Size:276K 1
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9.7. Size:656K international rectifier
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StrongIRFET IRFB7534PbF IRFS7534PbF IRFSL7534PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.0m Half-bridge and full-bridge topologies max 2.4mG Synchronous rectifier applications ID (Silicon Limited) 232A

9.8. Size:292K international rectifier
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StrongIRFETIRFS7437PbFIRFSL7437PbFApplicationsl Brushed Motor drive applicationsl BLDC Motor drive applicationsHEXFET Power MOSFETl Battery powered circuitsVDSS 40VDl Half-bridge and full-bridge topologiesl Synchronous rectifier applications RDS(on) typ. 1.4m l Resonant mode power supplies max. 1.8m l OR-ing and redundant power switches GID (Silicon Limite

9.9. Size:667K international rectifier
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StrongIRFET IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 8.4m Resonant mode power suppl

9.10. Size:654K international rectifier
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StrongIRFET IRFB7537PbF IRFS7537PbF IRFSL7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power sup

9.11. Size:542K international rectifier
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StrongIRFET IRFS7430-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V DPWM Inverterized topologies Battery powered circuits RDS(on) typ. 0.55m Half-bridge and full-bridge topologies 0.75mG max Electronic ballast applications ID (Silicon Limited) 52

9.12. Size:304K international rectifier
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StrongIRFETIRFS7434PbFIRFSL7434PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsVDSS 40VDl BLDC Motor drive applicationsRDS(on) typ. 1.25ml Battery powered circuits max. 1.6ml Half-bridge and full-bridge topologiesGl Synchronous rectifier applications 320AID (Silicon Limited)l Resonant mode power supplies SID (Package Limited) 19

9.13. Size:655K international rectifier
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StrongIRFET IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 295A

9.14. Size:613K international rectifier
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StrongIRFET IRFS7762PbF IRFSL7762PbF HEXFET Power MOSFET Application Brushed motor drive applications DVDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 5.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 6.7m Resonant mode power supplies SID 8

9.15. Size:298K international rectifier
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StrongIRFETIRFS7430PbFIRFSL7430PbFHEXFET Power MOSFETApplicationsVDSS 40VDl Brushed motor drive applicationsRDS(on) typ. 0.97ml BLDC motor drive applicationsl Battery powered circuits max. 1.2mGl Half-bridge and full-bridge topologies426AID (Silicon Limited)l Synchronous rectifier applicationsSID (Package Limited) 195A l Resonant mode power suppliesl O

9.16. Size:516K international rectifier
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StrongIRFET IRFS7534-7PPbF HEXFET Power MOSFET Application Brushed motor drive applications BLDC motor drive applications VDSS 60V D Battery powered circuits RDS(on) typ. 1.60m Half-bridge and full-bridge topologies max 1.95m Synchronous rectifier applications G Resonant mode power supplies ID (Silicon Limit

9.17. Size:653K international rectifier
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StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp

9.18. Size:657K international rectifier
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StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6mG Synchronous rectifier applications ID (Silicon Limited) 246A

9.19. Size:301K international rectifier
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StrongIRFETIRFS7440PbFIRFSL7440PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsl Battery powered circuitsDVDSS 40Vl Half-bridge and full-bridge topologiesRDS(on) typ. 2.0ml Synchronous rectifier applications max. 2.5ml Resonant mode power supplies GID 208Al OR-ing and redundant power switchesl DC/DC an

9.20. Size:576K international rectifier
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StrongIRFET IRFS7734-7PPbF HEXFET Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications VDSS 75V D Battery powered circuits RDS(on) typ. 2.6m Half-bridge and full-bridge topologies G max 3.05m Synchronous rectifier applications S Resonant mode power supplies ID 197A O

9.21. Size:650K international rectifier
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9.22. Size:985K international rectifier
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9.23. Size:610K international rectifier
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9.24. Size:565K international rectifier
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StrongIRFET IRFS7530-7PPbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V BLDC Motor drive applications DRDS(on) typ. Battery powered circuits 1.15m Half-bridge and full-bridge topologies max 1.4mG Synchronous rectifier applications ID (Silicon Limited) 338A S Resonant mode

9.25. Size:262K international rectifier
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StrongIRFETIRFS7437-7PPbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsDl PWM Inverterized topologies VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.1ml Half-bridge and full-bridge topologies max. 1.4ml Electronic ballast applicationsGID (Silicon Limited) 295Al Synchronous rectifier applicationsl Reso

9.26. Size:657K international rectifier
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9.27. Size:518K international rectifier
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StrongIRFET IRFS7730-7PPbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V BLDC motor drive applications DRDS(on) typ. Battery powered circuits 1.70m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 269A S Resonant mode

9.28. Size:655K international rectifier
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StrongIRFET IRFB7540PbF IRFS7540PbF IRFSL7540PbF HEXFET Power MOSFET Application Brushed Motor drive applications DVDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 4.2m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 5.1m Resonant mode power sup

9.29. Size:538K international rectifier
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StrongIRFET IRFS7434-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 40V DBattery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 0.70m Synchronous rectifier applications 1.0mG max Resonant mode power supplies ID (Silicon Limited

9.30. Size:655K international rectifier
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9.31. Size:904K fairchild semi
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November 2001IRF730B/IRFS730B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC)planar, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to

9.32. Size:924K fairchild semi
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November 2001IRF740B/IRFS740B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to

9.33. Size:931K samsung
irfs740a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

9.34. Size:506K samsung
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Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.765 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

9.35. Size:28K samsung
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9.36. Size:1059K blue-rocket-elect
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IRFS730 Rev.D Mar.-2016 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency

9.37. Size:1213K blue-rocket-elect
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IRFS740 Rev.D Mar.-2016 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency

9.38. Size:258K inchange semiconductor
irfs7730.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFS7730FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

9.39. Size:258K inchange semiconductor
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Isc N-Channel MOSFET Transistor IRFS7787FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

9.40. Size:251K inchange semiconductor
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isc N-Channel MOSFET Transistor IRFS7434FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

9.41. Size:252K inchange semiconductor
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isc N-Channel MOSFET Transistor IRFS7540FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

9.42. Size:257K inchange semiconductor
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Isc N-Channel MOSFET Transistor IRFS7762FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

9.43. Size:215K inchange semiconductor
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isc N-Channel MOSFET Transistor IRFS7534TRLPBFDESCRIPTIONDrain Current I =232 A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhan

9.44. Size:205K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFS7440PBFFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC/AC InvertersDC/DC a

9.45. Size:258K inchange semiconductor
irfs7530.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFS7530FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

9.46. Size:258K inchange semiconductor
irfs7734.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFS7734FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

9.47. Size:257K inchange semiconductor
irfs7537.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFS7537FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

9.48. Size:252K inchange semiconductor
irfs7437.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFS7437FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .