APQ02SN60AB Datasheet and Replacement. Cross Reference Search

APQ02SN60AB Datasheet (PDF)

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DEVICE SPECIFICATION APQ02SN60AAAPQ02SN60AB600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8(typ)VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

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DEVICE SPECIFICATION apQ02SN60A(F)600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2ARDS(on) =3.8(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

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DEVICE SPECIFICATION APQ02SN60AH APQ02SN60AF 600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8(typ)VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .