APQ02SN60AB Datasheet. Specs and Replacement
Type Designator: APQ02SN60AB 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.6 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
Package: TO-252
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APQ02SN60AB substitution
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APQ02SN60AB datasheet
apq02sn60ab.pdf
DEVICE SPECIFICATION APQ02SN60AA APQ02SN60AB 600V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8 (typ) VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi... See More ⇒
apq02sn60a.pdf
DEVICE SPECIFICATION apQ02SN60A(F) 600V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A RDS(on) =3.8 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st... See More ⇒
apq02sn60aa.pdf
DEVICE SPECIFICATION APQ02SN60AA APQ02SN60AB 600V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8 (typ) VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi... See More ⇒
apq02sn60af apq02sn60ah.pdf
DEVICE SPECIFICATION APQ02SN60AH APQ02SN60AF 600V/2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8 (typ) VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to ... See More ⇒
Detailed specifications: APM6010K, APM6055NU, APM8010K, APM9988QG, APQ01SN60AA, APQ01SN60AB, APQ02SN60A, APQ02SN60AA, IRFB3607, APQ02SN60AF, APQ02SN60AH, APQ02SN65AA, APQ02SN65AB, APQ02SN65AF, APQ02SN65AH, APQ03SN60AB, APQ03SN80A
Keywords - APQ02SN60AB MOSFET specs
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