All MOSFET. APQ02SN60AH Datasheet

 

APQ02SN60AH Datasheet and Replacement


   Type Designator: APQ02SN60AH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.6 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: TO-220
 

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APQ02SN60AH Datasheet (PDF)

 ..1. Size:738K  alpha pacific
 apq02sn60af apq02sn60ah.pdf pdf_icon

APQ02SN60AH

DEVICE SPECIFICATION APQ02SN60AH APQ02SN60AF 600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8(typ)VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 4.1. Size:545K  alpha pacific
 apq02sn60a.pdf pdf_icon

APQ02SN60AH

DEVICE SPECIFICATION apQ02SN60A(F)600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2ARDS(on) =3.8(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

 4.2. Size:701K  alpha pacific
 apq02sn60ab.pdf pdf_icon

APQ02SN60AH

DEVICE SPECIFICATION APQ02SN60AAAPQ02SN60AB600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8(typ)VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

 4.3. Size:701K  alpha pacific
 apq02sn60aa.pdf pdf_icon

APQ02SN60AH

DEVICE SPECIFICATION APQ02SN60AAAPQ02SN60AB600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8(typ)VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

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Datasheet: APM8010K , APM9988QG , APQ01SN60AA , APQ01SN60AB , APQ02SN60A , APQ02SN60AA , APQ02SN60AB , APQ02SN60AF , AO4407 , APQ02SN65AA , APQ02SN65AB , APQ02SN65AF , APQ02SN65AH , APQ03SN60AB , APQ03SN80A , APQ03SN80AF , APQ03SN80CB .

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