All MOSFET. APQ02SN65AF Datasheet

 

APQ02SN65AF Datasheet and Replacement


   Type Designator: APQ02SN65AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO-220F
 

 APQ02SN65AF substitution

   - MOSFET ⓘ Cross-Reference Search

 

APQ02SN65AF Datasheet (PDF)

 4.1. Size:398K  alpha pacific
 apq02sn65aa.pdf pdf_icon

APQ02SN65AF

DEVICE SPECIFICATION APQ02SN65AA APQ02SN65AB 650V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 650V / 2A effect transistors are produced using planar stripe, RDS(on) =4.0(typ) VGS =10V, ID =1A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to m

 4.2. Size:398K  alpha pacific
 apq02sn65ab.pdf pdf_icon

APQ02SN65AF

DEVICE SPECIFICATION APQ02SN65AA APQ02SN65AB 650V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 650V / 2A effect transistors are produced using planar stripe, RDS(on) =4.0(typ) VGS =10V, ID =1A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to m

 6.1. Size:545K  alpha pacific
 apq02sn60a.pdf pdf_icon

APQ02SN65AF

DEVICE SPECIFICATION apQ02SN60A(F)600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2ARDS(on) =3.8(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

 6.2. Size:701K  alpha pacific
 apq02sn60ab.pdf pdf_icon

APQ02SN65AF

DEVICE SPECIFICATION APQ02SN60AAAPQ02SN60AB600V/2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 2A effect transistors are produced using planar stripe, RDS(on) =3.8(typ)VGS =10V, ID =1.2A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

SHOW MORE

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Keywords - APQ02SN65AF MOSFET datasheet

 APQ02SN65AF cross reference
 APQ02SN65AF equivalent finder
 APQ02SN65AF lookup
 APQ02SN65AF substitution
 APQ02SN65AF replacement

 

 
Back to Top

 


 
.