APQ03SN80CF PDF and Equivalents Search

 

APQ03SN80CF Specs and Replacement

Type Designator: APQ03SN80CF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: TO-220F

APQ03SN80CF substitution

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APQ03SN80CF datasheet

 ..1. Size:897K  alpha pacific
 apq03sn80cf apq03sn80ch.pdf pdf_icon

APQ03SN80CF

DEVICE SPECIFICATION APQ03SN80CH APQ03SN80CF 800V/3A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =4.0 (typ) VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to ... See More ⇒

 4.1. Size:856K  alpha pacific
 apq03sn80cb.pdf pdf_icon

APQ03SN80CF

DEVICE SPECIFICATION APQ03SN80CB 800V/3A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =4.0 (typ) VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta... See More ⇒

 5.1. Size:470K  alpha pacific
 apq03sn80a apq03sn80af.pdf pdf_icon

APQ03SN80CF

DEVICE SPECIFICATION apQ03SN80A(F) 800V/3A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =3.6 (typ) VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta... See More ⇒

 7.1. Size:353K  alpha pacific
 apq03sn60ab.pdf pdf_icon

APQ03SN80CF

DEVICE SPECIFICATION apQ03SN60AB 600V/3A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 3A RDS(on) =3.2 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat... See More ⇒

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Detailed specifications: APQ02SN65AA, APQ02SN65AB, APQ02SN65AF, APQ02SN65AH, APQ03SN60AB, APQ03SN80A, APQ03SN80AF, APQ03SN80CB, 4N60, APQ03SN80CH, APQ04SN60A, APQ04SN60AF, APQ04SN60CA, APQ04SN60CB, APQ04SN60CE, APQ04SN60CF, APQ04SN60CH

Keywords - APQ03SN80CF MOSFET specs

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