All MOSFET. APQ06SN60A Datasheet

 

APQ06SN60A Datasheet and Replacement


   Type Designator: APQ06SN60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 16 nC
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220
 

 APQ06SN60A substitution

   - MOSFET ⓘ Cross-Reference Search

 

APQ06SN60A Datasheet (PDF)

 ..1. Size:377K  alpha pacific
 apq06sn60a.pdf pdf_icon

APQ06SN60A

DEVICE SPECIFICATION apQ06SN60A(F)600V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A RDS(on) =1.0(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-

 0.1. Size:661K  alpha pacific
 apq06sn60af.pdf pdf_icon

APQ06SN60A

DEVICE SPECIFICATION APQ06SN60AH APQ06SN60AF 600V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A effect transistors are produced using planar stripe, RDS(on) =1.0(typ)VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 0.2. Size:695K  alpha pacific
 apq06sn60ah.pdf pdf_icon

APQ06SN60A

DEVICE SPECIFICATION APQ06SN60AH APQ06SN60AF 600V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A effect transistors are produced using planar stripe, RDS(on) =1.0(typ)VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 6.1. Size:633K  alpha pacific
 apq06sn65af apq06sn65ah.pdf pdf_icon

APQ06SN60A

DEVICE SPECIFICATION APQ06SN65AH APQ06SN65AF 650V/6A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 650V / 6A effect transistors are produced using planar stripe, RDS(on) =1.2(typ)VGS =10V, ID =3A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

SHOW MORE

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - APQ06SN60A MOSFET datasheet

 APQ06SN60A cross reference
 APQ06SN60A equivalent finder
 APQ06SN60A lookup
 APQ06SN60A substitution
 APQ06SN60A replacement

 

 
Back to Top

 


 
.