APQ10SN60A PDF and Equivalents Search

 

APQ10SN60A Specs and Replacement

Type Designator: APQ10SN60A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32.3 nS

Cossⓘ - Output Capacitance: 162 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO-220

APQ10SN60A substitution

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APQ10SN60A datasheet

 ..1. Size:437K  alpha pacific
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APQ10SN60A

DEVICE SPECIFICATION apQ10SN60A(F) 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A RDS(on) =0.6 (Typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat... See More ⇒

 0.1. Size:687K  alpha pacific
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APQ10SN60A

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6 (Typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi... See More ⇒

 0.2. Size:687K  alpha pacific
 apq10sn60ah.pdf pdf_icon

APQ10SN60A

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6 (Typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi... See More ⇒

 6.1. Size:373K  alpha pacific
 apq10sn65af apq10sn65ah.pdf pdf_icon

APQ10SN60A

DEVICE SPECIFICATION APQ10SN65AH APQ10SN65AF 650V/10A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 650V / 10A field effect transistors are produced using planar RDS(on) = 0.75 (typ) VGS = 10 V ,ID =5A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo... See More ⇒

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Detailed specifications: APQ09SN50AF, APQ09SN90AD, APQ0CSN60A, APQ0CSN60AJ, APQ0DSN60AJ, APQ10SN40A, APQ10SN40AF, APQ10SN40AH, AOD4184A, APQ10SN60AF, APQ10SN60AH, APQ10SN65AF, APQ10SN65AH, APQ110SN5EA, APQ110SN5EAD, APQ110SN5EAH, APQ11BSN40A

Keywords - APQ10SN60A MOSFET specs

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