APQ11BSN40A PDF and Equivalents Search

 

APQ11BSN40A PDF Specs and Replacement


   Type Designator: APQ11BSN40A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 101 nS
   Cossⓘ - Output Capacitance: 181 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220
 

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APQ11BSN40A PDF Specs

 ..1. Size:379K  alpha pacific
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APQ11BSN40A

DEVICE SPECIFICATION apQ11BSN40A 400V/11.2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 400V / 11.2A RDS(on) = 0.3 (typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =6.72A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi... See More ⇒

 9.1. Size:187K  alpha pacific
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APQ11BSN40A

DEVICE SPECIFICATION APQ110SN5EAH 55V/110A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, effect transistors are produced using planar stripe, RDS(on) =6m (typ) VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on... See More ⇒

 9.2. Size:338K  alpha pacific
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APQ11BSN40A

DEVICE SPECIFICATION APQ110SN5EAD 55V/110A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, effect transistors are produced using planar stripe, RDS(on) =6m (typ) VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-s... See More ⇒

 9.3. Size:92K  alpha pacific
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APQ11BSN40A

DEVICE SPECIFICATION apQ110SN5EA 55V/110A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, RDS(on) =6m (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta... See More ⇒

Detailed specifications: APQ10SN60A , APQ10SN60AF , APQ10SN60AH , APQ10SN65AF , APQ10SN65AH , APQ110SN5EA , APQ110SN5EAD , APQ110SN5EAH , IRF740 , APQ12SN60A , APQ12SN60AF , APQ12SN60AH , APQ12SN65AF , APQ12SN65AH , APQ13SN50A , APQ13SN50AF , APQ13SN50AH .

Keywords - APQ11BSN40A MOSFET specs

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