APQ11BSN40A Datasheet and Replacement. Cross Reference Search

APQ11BSN40A Datasheet (PDF)

..1. Size:379K alpha pacific
apq11bsn40a.pdf pdf_icon

DEVICE SPECIFICATION apQ11BSN40A400V/11.2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 400V / 11.2A RDS(on) = 0.3(typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =6.72A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

9.1. Size:187K alpha pacific
apq110sn5eah.pdf pdf_icon

DEVICE SPECIFICATION APQ110SN5EAH 55V/110A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, effect transistors are produced using planar stripe, RDS(on) =6m(typ) VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on

9.2. Size:338K alpha pacific
apq110sn5ead.pdf pdf_icon

DEVICE SPECIFICATION APQ110SN5EAD 55V/110A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, effect transistors are produced using planar stripe, RDS(on) =6m(typ)VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-s

9.3. Size:92K alpha pacific
apq110sn5ea.pdf pdf_icon

DEVICE SPECIFICATION apQ110SN5EA55V/110A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, RDS(on) =6m(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta

Datasheet: APQ10SN60A , APQ10SN60AF , APQ10SN60AH , APQ10SN65AF , APQ10SN65AH , APQ110SN5EA , APQ110SN5EAD , APQ110SN5EAH , IRF740 , APQ12SN60A , APQ12SN60AF , APQ12SN60AH , APQ12SN65AF , APQ12SN65AH , APQ13SN50A , APQ13SN50AF , APQ13SN50AH .