IRFS731 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFS731
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 3.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 99 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220F
IRFS731 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFS731 Datasheet (PDF)
irfs730b.pdf
November 2001IRF730B/IRFS730B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC)planar, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to
irfs730a.pdf
Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.765 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
irfs730.pdf
IRFS730 Rev.D Mar.-2016 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency
Datasheet: IRFS710A , IRFS720 , IRFS720A , IRFS721 , IRFS722 , IRFS723 , IRFS730 , IRFS730A , RU6888R , IRFS732 , IRFS733 , IRFS740 , IRFS740A , IRFS741 , IRFS742 , IRFS743 , IRFS750A .
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