IRFS731 Specs and Replacement

Type Designator: IRFS731

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 99 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220F

IRFS731 substitution

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IRFS731 datasheet

 ..1. Size:286K  1
 irfs730 irfs731.pdf pdf_icon

IRFS731

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 irfs730 irfs731 irfs732 irfs733.pdf pdf_icon

IRFS731

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 8.1. Size:904K  fairchild semi
 irfs730b.pdf pdf_icon

IRFS731

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 8.2. Size:506K  samsung
 irfs730a.pdf pdf_icon

IRFS731

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.765 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic ... See More ⇒

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Detailed specifications: IRFS710A, IRFS720, IRFS720A, IRFS721, IRFS722, IRFS723, IRFS730, IRFS730A, IRF2807, IRFS732, IRFS733, IRFS740, IRFS740A, IRFS741, IRFS742, IRFS743, IRFS750A

Keywords - IRFS731 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.