APQ4ESN50AE Datasheet and Replacement. Cross Reference Search

APQ4ESN50AE Datasheet (PDF)

..1. Size:662K alpha pacific
apq4esn50ae.pdf pdf_icon

DEVICE SPECIFICATION APQ4ESN50AE 500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2(typ)VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on

4.1. Size:504K alpha pacific
apq4esn50a.pdf pdf_icon

DEVICE SPECIFICATION apQ4ESN50A(F)500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A, RDS(on) =1.2(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize

4.2. Size:643K alpha pacific
apq4esn50ab.pdf pdf_icon

DEVICE SPECIFICATION APQ4ESN50AB 500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2(typ)VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o

4.3. Size:878K alpha pacific
apq4esn50af apq4esn50ah.pdf pdf_icon

DEVICE SPECIFICATION APQ4ESN50AH APQ4ESN50AF 500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2(typ) VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailore

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .