All MOSFET. APQ4ESN50AE Datasheet

 

APQ4ESN50AE Datasheet and Replacement


   Type Designator: APQ4ESN50AE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-263
 

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APQ4ESN50AE Datasheet (PDF)

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APQ4ESN50AE

DEVICE SPECIFICATION APQ4ESN50AE 500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2(typ)VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on

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APQ4ESN50AE

DEVICE SPECIFICATION apQ4ESN50A(F)500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A, RDS(on) =1.2(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize

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APQ4ESN50AE

DEVICE SPECIFICATION APQ4ESN50AB 500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2(typ)VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o

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APQ4ESN50AE

DEVICE SPECIFICATION APQ4ESN50AH APQ4ESN50AF 500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2(typ) VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailore

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Datasheet: APQ1HSN60AA , APQ1HSN60AB , APQ25SN06AA , APQ25SN06AB , APQ39SN04AA , APQ39SN04AB , APQ4ESN50A , APQ4ESN50AB , 2SK3878 , APQ4ESN50AF , APQ4ESN50AH , APQ4ESN65AF , APQ4ESN65AH , APQ50SN06A , APQ50SN06AD , APQ50SN06AH , APQ57SN10B .

History: TMD5N50G | MDF5N50ZTH | FDU5N50NZTU | STP5N50

Keywords - APQ4ESN50AE MOSFET datasheet

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