IRFS733 Specs and Replacement

Type Designator: IRFS733

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 99 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO220F

IRFS733 substitution

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IRFS733 datasheet

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 irfs730 irfs731 irfs732 irfs733.pdf pdf_icon

IRFS733

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IRFS733

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 8.2. Size:904K  fairchild semi
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IRFS733

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 8.3. Size:506K  samsung
 irfs730a.pdf pdf_icon

IRFS733

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.765 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic ... See More ⇒

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Detailed specifications: IRFS720A, IRFS721, IRFS722, IRFS723, IRFS730, IRFS730A, IRFS731, IRFS732, IRFZ24N, IRFS740, IRFS740A, IRFS741, IRFS742, IRFS743, IRFS750A, IRFS820, IRFS820A

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