APQ65SN06AD MOSFET Datasheet: N-Ch, 60V, 65A. Full specification with pinout and replacement list

APQ65SN06AD Specs and Replacement

Type Designator: APQ65SN06AD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32.4 nS

Cossⓘ - Output Capacitance: 449 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO-247

APQ65SN06AD substitution

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APQ65SN06AD datasheet

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DEVICE SPECIFICATION APQ65SN06AD 60V/65A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 65A effect transistors are produced using planar stripe, RDS(on) =13m (typ) VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat... See More ⇒

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DEVICE SPECIFICATION apQ65SN06A 60V/65A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 84A, RDS(on) =13m (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state... See More ⇒

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DEVICE SPECIFICATION APQ65SN06AH 60V/65A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 65A effect transistors are produced using planar stripe, RDS(on) =13m (typ) VGS =10V, ID =39A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st... See More ⇒

Detailed specifications: APQ50SN06AD , APQ50SN06AH , APQ57SN10B , APQ57SN10BH , APQ5ESN40A , APQ5ESN40AF , APQ5ESN40AH , APQ65SN06A , K3569 , APQ65SN06AH , APQ84SN06A , APQ84SN06AD , APQ84SN06AH , APQ9ESN20AB , CEB05N8 , CEB110P03 , CEB18N5 .