All MOSFET. CEF05N8 Datasheet

 

CEF05N8 Datasheet and Replacement


   Type Designator: CEF05N8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm
   Package: TO-220F
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CEF05N8 Datasheet (PDF)

 ..1. Size:344K  cet
ceb05n8 cef05n8 cep05n8.pdf pdf_icon

CEF05N8

CEP05N8/CEB05N8CEF05N8N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP05N8 800V 2.9 4.4A 10VCEB05N8 800V 2.9 4.4A 10VCEF05N8 800V 2.9 4.4A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF S

 8.1. Size:427K  cet
cep05n65 ceb05n65 cef05n65.pdf pdf_icon

CEF05N8

CEP05N65/CEB05N65CEF05N65N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP05N65 650V 2.4 4.5A 10VCEB05N65 650V 2.4 4.5A 10VCEF05N65 650V 2.4 4.5A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO

 8.2. Size:570K  cet
cef05n6.pdf pdf_icon

CEF05N8

CEF05N6PRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 5A, RDS(ON) = 2.4 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220F full-pak for through hole.GCEF SERIESSTO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbo

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History: PR804BA33 | CED05N8 | AON6794 | IRLR024 | P3304QV | BUZ84 | BL10N70-A

Keywords - CEF05N8 MOSFET datasheet

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