CEP110P03 Datasheet and Replacement
Type Designator: CEP110P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 105.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 1505 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: TO-220
CEP110P03 substitution
CEP110P03 Datasheet (PDF)
ceb110p03 cep110p03.pdf

CEP110P03/CEB110P03P-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES-30V, -105.5A, RDS(ON) =5.8m @VGS = -10V.RDS(ON) =8.5m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABS
cep1195 ceb1195 cef1195.pdf

CEP1195/CEB1195 CEF1195N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP1195 900V 2.75 5A 10VCEB1195 900V 2.75 5A 10VCEF1195 900V 2.75 5A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)
cep1186 ceb1186 cef1186.pdf

CEP1186/CEB1186CEF1186N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP1186 800V 2.3 6A 10VCEB1186 800V 2.3 6A 10VCEF1186 800V 2.3 6A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)
ncep11n10as.pdf

NCEP11N10ASNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =12A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=4.5V losses are minim
Datasheet: CEEF02N65G , CEF05N8 , CEF18N5 , CEF30N3 , CEM101 , CEM2133 , CEM4248 , CEP05N8 , 75N75 , CEP18N5 , CEP30N3 , CEU5175 , HX2N60 , HX4N60 , HX50N06-TA3 , HX5N6 , HX70N06-TA3 .
History: WMK08N65C4 | AONP36332
Keywords - CEP110P03 MOSFET datasheet
CEP110P03 cross reference
CEP110P03 equivalent finder
CEP110P03 lookup
CEP110P03 substitution
CEP110P03 replacement
History: WMK08N65C4 | AONP36332



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