HX50N06-TA3 Specs and Replacement

Type Designator: HX50N06-TA3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO-220

HX50N06-TA3 substitution

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HX50N06-TA3 datasheet

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 hx50n06-ta3 hx5n6.pdf pdf_icon

HX50N06-TA3

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Detailed specifications: CEM4248, CEP05N8, CEP110P03, CEP18N5, CEP30N3, CEU5175, HX2N60, HX4N60, 2N60, HX5N6, HX70N06-TA3, HX70N6, HY10N65T, HY110N06T, HY125N10T, HY12N65T, HY13N50T

Keywords - HX50N06-TA3 MOSFET specs

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