HX70N6 Specs and Replacement
Type Designator: HX70N6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 158 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 690 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO-220
HX70N6 substitution
- MOSFET ⓘ Cross-Reference Search
HX70N6 datasheet
Detailed specifications: CEP18N5, CEP30N3, CEU5175, HX2N60, HX4N60, HX50N06-TA3, HX5N6, HX70N06-TA3, 75N75, HY10N65T, HY110N06T, HY125N10T, HY12N65T, HY13N50T, HY150N075T, HY18N20D, HY18N20T
Keywords - HX70N6 MOSFET specs
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