HX70N6 MOSFET. Datasheet pdf. Equivalent

   Type Designator: HX70N6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 158 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-220

HX70N6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search