All MOSFET. HY2N65D Datasheet

 

HY2N65D MOSFET. Datasheet pdf. Equivalent

Type Designator: HY2N65D

SMD Transistor Code: 2N65D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 43.8 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 18.6 nS

Drain-Source Capacitance (Cd): 36 pF

Maximum Drain-Source On-State Resistance (Rds): 4.6 Ohm

Package: TO-252

HY2N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY2N65D Datasheet (PDF)

1.1. hy2n65d.pdf Size:168K _upd-mosfet

HY2N65D
HY2N65D

SINGLE FIG.SINGLE CURVE FIG. 2 – NON- T1 – FORWARD CURRENT AMBIENT 1 2MAXIMUM5 10 1 25 50 PHASE HALF WAVE 60Hz (℃) 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125 HY2N65D / HY2N65M 650V / 2A 650V, RDS(ON)=4.6W@VGS=10V, ID=1A N-Channel Enhancement Mode MOSFET Features TO-252 TO-251 • Low On-State Resistance • Fast Switching • Low Gate Cha

4.1. hy2n65t.pdf Size:146K _upd-mosfet

HY2N65D
HY2N65D

HY2N65T / HY2N65FT 650V / 2A 650V, RDS(ON)=4.6W@VGS=10V, ID=1A N-Channel Enhancement Mode MOSFET Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS • In compliance with EU RoHs 2002/95/EC Directives 1 1

 5.1. hy2n60t.pdf Size:124K _upd-mosfet

HY2N65D
HY2N65D

HY2N60T / HY2N60FT 600V / 2.0A 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1.0A N-Channel Enhancement Mode MOSFET Features • Low ON Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS 1 1 2 2 • In compliance with EU RoHs 2002/95/EC Directives G G 3 3 D D S

5.2. hy2n60d.pdf Size:193K _upd-mosfet

HY2N65D
HY2N65D

HY2N60D / HY2N60M 600V / 2.0A 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1.0A N-Channel Enhancement Mode MOSFET Features • Low ON Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, PFC and SMPS 2 1 1 D G 2 • In compliance with EU RoHs 2002/95/EC Directives G 3 DS3 S Mechanical Info

Datasheet: HY13N50T , HY150N075T , HY18N20D , HY18N20T , HY18N50W , HY1N60D , HY2N60D , HY2N60T , FDS4435 , HY2N65T , HY2N70D , HY2N70T , HY3N80T , HY4N60D , HY4N60T , HY4N65D , HY4N65T .

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