HY2N70T Specs and Replacement
Type Designator: HY2N70T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26.8 nS
Cossⓘ - Output Capacitance: 32 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
Package: TO-220AB
HY2N70T substitution
- MOSFET ⓘ Cross-Reference Search
HY2N70T datasheet
hy2n70t.pdf
HY2N70T / HY2N70FT 700V / 2A 700V, RDS(ON)=6.5W@VGS=10V, ID=1A N-Channel Enhancement Mode MOSFET Features TO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 1 ... See More ⇒
hy2n70d.pdf
SINGLE FIG.SINGLE CURVE FIG. 2 NON- T1 FORWARD CURRENT AMBIENT 1 2MAXIMUM5 10 1 25 50 PHASE HALF WAVE 60Hz ( ) 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125 HY2N70D / HY2N70M 700V / 2A 700V, RDS(ON)=6.5W@VGS=10V, ID=1A N-Channel Enhancement Mode MOSFET Features TO-252 TO-251 Low On-State Resistance Fast Switching Low Gate Cha... See More ⇒
Detailed specifications: HY18N20T, HY18N50W, HY1N60D, HY2N60D, HY2N60T, HY2N65D, HY2N65T, HY2N70D, MMIS60R580P, HY3N80T, HY4N60D, HY4N60T, HY4N65D, HY4N65T, HY4N70D, HY4N70T, HY5N50T
Keywords - HY2N70T MOSFET specs
HY2N70T cross reference
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