All MOSFET. HY7N80T Datasheet

 

HY7N80T Datasheet and Replacement


   Type Designator: HY7N80T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 72.8 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.65 Ohm
   Package: TO-220AB
 

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HY7N80T Datasheet (PDF)

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HY7N80T

SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON-T1 FORWARD CURRENT AMBIENT TEMPERATURE () 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY7N80T / HY7N80FT 800V / 7A800V, RDS(ON)=1.65W@VGS=10V, ID=3.5AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching L

Datasheet: HY4N65T , HY4N70D , HY4N70T , HY5N50T , HY6N60D , HY6N60T , HY75N075T , HY75N10T , IRF540N , HY80N075T , HY80N07T , HY8N50T , HY8N65T , HY8N70T , RU1088R , RU120N15Q , RU120N15R .

History: 2SK3299-S | TPA50R400C | GP2M012A060X | STW12NA60 | PK696BA | BLP02N08-BA | AP9467GJ-HF

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