HY7N80T Specs and Replacement

Type Designator: HY7N80T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 72.8 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.65 Ohm

Package: TO-220AB

HY7N80T substitution

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HY7N80T datasheet

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 hy7n80t.pdf pdf_icon

HY7N80T

SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON- T1 FORWARD CURRENT AMBIENT TEMPERATURE ( ) 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY7N80T / HY7N80FT 800V / 7A 800V, RDS(ON)=1.65W@VGS=10V, ID=3.5A N-Channel Enhancement Mode MOSFET Features TO-220AB ITO-220AB Low On-State Resistance Fast Switching L... See More ⇒

Detailed specifications: HY4N65T, HY4N70D, HY4N70T, HY5N50T, HY6N60D, HY6N60T, HY75N075T, HY75N10T, IRF540, HY80N075T, HY80N07T, HY8N50T, HY8N65T, HY8N70T, RU1088R, RU120N15Q, RU120N15R

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