IRFS821 Specs and Replacement

Type Designator: IRFS821

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO220F

IRFS821 substitution

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IRFS821 datasheet

 ..1. Size:284K  1
 irfs820 irfs821.pdf pdf_icon

IRFS821

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 irfs820 irfs821 irfs822 irfs823.pdf pdf_icon

IRFS821

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 8.1. Size:866K  fairchild semi
 irf820b irfs820b.pdf pdf_icon

IRFS821

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 8.2. Size:502K  samsung
 irfs820a.pdf pdf_icon

IRFS821

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 2.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va... See More ⇒

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Detailed specifications: IRFS740, IRFS740A, IRFS741, IRFS742, IRFS743, IRFS750A, IRFS820, IRFS820A, 7N60, IRFS822, IRFS823, IRFS830, IRFS830A, IRFS831, IRFS832, IRFS833, IRFS840

Keywords - IRFS821 MOSFET specs

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