RU1H100R Specs and Replacement

Type Designator: RU1H100R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 86 nS

Cossⓘ - Output Capacitance: 265 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO-220

RU1H100R substitution

- MOSFET ⓘ Cross-Reference Search

 

RU1H100R datasheet

 ..1. Size:288K  ruichips
 ru1h100r.pdf pdf_icon

RU1H100R

RU1H100R N-Channel Advanced Power MOSFET Features Pin Description 100V/75A RDS (ON)=11m (Typ.) @ VGS=10V Ultra Low On-Resistance Extremely high dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested Applications High Speed Power Switching Uninterruptible Power Supply N-Channel MOSFET Absolute Maximum Ratings Symbol Parame... See More ⇒

 9.1. Size:292K  ruichips
 ru1h130q.pdf pdf_icon

RU1H100R

RU1H130Q N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, RDS (ON) =7m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G D S TO247 D Applications High Efficiency Synchronous Rectification in SMPS High Speed Power Switching G S N-Chan... See More ⇒

 9.2. Size:321K  ruichips
 ru1h130r.pdf pdf_icon

RU1H100R

RU1H130R N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, RDS (ON) =7m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D Applications High Efficiency Synchronous Rectification in SMPS High Speed Power Switching G S N-Chan... See More ⇒

 9.3. Size:372K  ruichips
 ru1h150s.pdf pdf_icon

RU1H100R

RU1H150S N-Channel Advanced Power MOSFET Features Pin Description 108V/150A, RDS (ON) =3.5m (Typ.)@VGS=10V D Advanced HEFET Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 100% l h t t d 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D D D D D D D Applicat... See More ⇒

SHOW MORE

Detailed specifications: RU120N15R, RU140N10R, RU16P8M4, RU190N10Q, RU190N10R, RU190N10S, RU1C001UN, RU1C001ZP, 2N7000, RU1H130Q, RU1H130R, RU1H130S, RU1H190R, RU1H190S, RU1H300Q, RU1H35K, RU1H35L

Keywords - RU1H100R MOSFET specs

 RU1H100R cross reference

 RU1H100R equivalent finder

 RU1H100R pdf lookup

 RU1H100R substitution

 RU1H100R replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility