IRFS822 Specs and Replacement
Type Designator: IRFS822
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 52 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO220F
IRFS822 substitution
- MOSFET ⓘ Cross-Reference Search
IRFS822 datasheet
irfs820a.pdf
Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 2.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va... See More ⇒
Detailed specifications: IRFS740A, IRFS741, IRFS742, IRFS743, IRFS750A, IRFS820, IRFS820A, IRFS821, IRFZ48N, IRFS823, IRFS830, IRFS830A, IRFS831, IRFS832, IRFS833, IRFS840, IRFS840A
Keywords - IRFS822 MOSFET specs
IRFS822 cross reference
IRFS822 equivalent finder
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IRFS822 substitution
IRFS822 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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