All MOSFET. IRFS822 Datasheet

 

IRFS822 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFS822
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO220F

 IRFS822 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFS822 Datasheet (PDF)

 ..1. Size:310K  1
 irfs820 irfs821 irfs822 irfs823.pdf

IRFS822 IRFS822

 8.1. Size:284K  1
 irfs820 irfs821.pdf

IRFS822 IRFS822

 8.2. Size:866K  fairchild semi
 irf820b irfs820b.pdf

IRFS822 IRFS822

November 2001IRF820B/IRFS820B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.5A, 500V, RDS(on) = 2.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

 8.3. Size:502K  samsung
 irfs820a.pdf

IRFS822 IRFS822

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 2.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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