IRFS822 Specs and Replacement

Type Designator: IRFS822

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: TO220F

IRFS822 substitution

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IRFS822 datasheet

 8.1. Size:284K  1
irfs820 irfs821.pdf pdf_icon

IRFS822

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 8.2. Size:866K  fairchild semi
irf820b irfs820b.pdf pdf_icon

IRFS822

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 8.3. Size:502K  samsung
irfs820a.pdf pdf_icon

IRFS822

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 2.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va... See More ⇒

Detailed specifications: IRFS740A, IRFS741, IRFS742, IRFS743, IRFS750A, IRFS820, IRFS820A, IRFS821, IRFZ48N, IRFS823, IRFS830, IRFS830A, IRFS831, IRFS832, IRFS833, IRFS840, IRFS840A

Keywords - IRFS822 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.