RU1H35Q Specs and Replacement

Type Designator: RU1H35Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 111 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 76 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO-247

RU1H35Q substitution

- MOSFET ⓘ Cross-Reference Search

 

RU1H35Q datasheet

 ..1. Size:287K  ruichips
 ru1h35q.pdf pdf_icon

RU1H35Q

RU1H35Q N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/40A, RDS (ON) =21m (Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO-247 Applications Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unles... See More ⇒

 8.1. Size:298K  ruichips
 ru1h35r.pdf pdf_icon

RU1H35Q

RU1H35R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/40A, RDS (ON) =21m (Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO-220 Applications Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unles... See More ⇒

 8.2. Size:290K  ruichips
 ru1h35s.pdf pdf_icon

RU1H35Q

RU1H35S N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/40A, RDS (ON) =21m (Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO-263 Applications Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unles... See More ⇒

 8.3. Size:282K  ruichips
 ru1h35k.pdf pdf_icon

RU1H35Q

RU1H35K N-Channel Advanced Power MOSFET Features Pin Description 100V/40A, RDS (ON) =21m (Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G D S TO251 D Applications High Speed Power Switching G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (... See More ⇒

SHOW MORE

Detailed specifications: RU1H130Q, RU1H130R, RU1H130S, RU1H190R, RU1H190S, RU1H300Q, RU1H35K, RU1H35L, STP75NF75, RU1H35R, RU1H35S, RU1H36L, RU1H36R, RU1H36S, RU1H40L, RU1H60R, RU1H7H

Keywords - RU1H35Q MOSFET specs

 RU1H35Q cross reference

 RU1H35Q equivalent finder

 RU1H35Q pdf lookup

 RU1H35Q substitution

 RU1H35Q replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.