IRFS823 Specs and Replacement
Type Designator: IRFS823
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 52 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO220F
IRFS823 substitution
- MOSFET ⓘ Cross-Reference Search
IRFS823 datasheet
irfs820a.pdf
Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 2.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va... See More ⇒
Detailed specifications: IRFS741 , IRFS742 , IRFS743 , IRFS750A , IRFS820 , IRFS820A , IRFS821 , IRFS822 , IRFZ46N , IRFS830 , IRFS830A , IRFS831 , IRFS832 , IRFS833 , IRFS840 , IRFS840A , IRFS841 .
Keywords - IRFS823 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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