IRFS823 PDF and Equivalents Search

 

IRFS823 Specs and Replacement

Type Designator: IRFS823

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: TO220F

IRFS823 substitution

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IRFS823 datasheet

 8.1. Size:284K  1
irfs820 irfs821.pdf pdf_icon

IRFS823

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 8.2. Size:866K  fairchild semi
irf820b irfs820b.pdf pdf_icon

IRFS823

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 8.3. Size:502K  samsung
irfs820a.pdf pdf_icon

IRFS823

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 2.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va... See More ⇒

Detailed specifications: IRFS741 , IRFS742 , IRFS743 , IRFS750A , IRFS820 , IRFS820A , IRFS821 , IRFS822 , IRFZ46N , IRFS830 , IRFS830A , IRFS831 , IRFS832 , IRFS833 , IRFS840 , IRFS840A , IRFS841 .

Keywords - IRFS823 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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