RU1HE3D MOSFET. Datasheet pdf. Equivalent
Type Designator: RU1HE3D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 85 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
Package: SOT-223
RU1HE3D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU1HE3D Datasheet (PDF)
ru1he3d.pdf
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RU1HE3DN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/3A,RDS (ON) =130m (Typ.) @ VGS=10VRDS (ON) =140m (Typ.) @ VGS=4.5V ESD Protected Reliable and RuggedSOT-223 Ultra Low On-Resistance 100% avalanche tested Lead Free and Green AvailableApplications Power ManagementN-Channel MOSFETAbsolute Maximum RatingsSymbolPa
ru1he3h.pdf
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RU1HE3HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/3A,RDS (ON) =135m (Typ.) @ VGS=10VRDS (ON) =150m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Converters LED BacklightN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rat
ru1he16l.pdf
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RU1HE16LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/16A,RDS (ON) =70m(Typ.)@VGS=10VRDS (ON) =85m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximum RatingsSymbolParamet
ru1he12l.pdf
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RU1HE12LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/12A,RDS (ON) =145m(Typ.)@VGS=10VRDS (ON) =160m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications ConvertersN-Channel MOSFETAbsolute Maximum Ra
ru1he4d.pdf
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RU1HE4D N-Channel Advanced Power MOSFET Features Pin Description 100V/4A, RDS (ON) =72m (Typ.) @ VGS=10V RDS (ON) =80m (Typ.) @ VGS=4.5V ESD Protected Reliable and Rugged SOT-223 Ultra Low On-Resistance Lead Free and Green Available Applications DC-DC Converter Motor Driving N-Channel MOSFET Absolute Maximum Ratings Symbol Pa
ru1he4h.pdf
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RU1HE4HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/4A,RDS (ON) =72m (Typ.) @ VGS=10VRDS (ON) =80m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Power Management Converters.N-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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![RU1HE3D](https://alltransistors.com/images/es.png)
![RU1HE3D](https://alltransistors.com/images/ru.png)
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