RU20130L Datasheet and Replacement
Type Designator: RU20130L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 108 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 130 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 520 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: TO-252
- MOSFET Cross-Reference Search
RU20130L Datasheet (PDF)
ru20130l.pdf

RU20130LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/130A,RDS (ON) =2.2m(Typ.)@VGS=10VRDS (ON) =4.5m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Proces
ru2013h.pdf

RU2013HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/13A,RDS (ON) =13m (Typ.) @ VGS=10VRDS (ON) =16m (Typ.) @ VGS=4.5VRDS (ON) =22m (Typ.) @ VGS=2.5V Super High Dense Cell Design Low On-Resistance Reliable and RuggedSOP-8 Lead Free and Green AvailableApplications DC/DC ConvertersN-Channel MOSFETAbsolute Maximum Ratin
ru20120l.pdf

RU20120LN-Channel Advanced Power MOSFETFeatures Pin Description 20V/120A, RDS (ON) =2.3m(Typ.)@VGS=10VRDS (ON) =4.2m(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)TO252Applications Power Management DC-DC ConvertersN-
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: MCH3484 | DMN30H4D0L
Keywords - RU20130L MOSFET datasheet
RU20130L cross reference
RU20130L equivalent finder
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RU20130L replacement
History: MCH3484 | DMN30H4D0L



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