RU20130L Specs and Replacement

Type Designator: RU20130L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 108 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO-252

RU20130L substitution

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RU20130L datasheet

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 ru20130l.pdf pdf_icon

RU20130L

RU20130L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 20V/130A, RDS (ON) =2.2m (Typ.)@VGS=10V RDS (ON) =4.5m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications High Frequency Synchronous Buck Converters for Computer Proces... See More ⇒

 8.1. Size:282K  ruichips
 ru2013h.pdf pdf_icon

RU20130L

RU2013H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 20V/13A, RDS (ON) =13m (Typ.) @ VGS=10V RDS (ON) =16m (Typ.) @ VGS=4.5V RDS (ON) =22m (Typ.) @ VGS=2.5V Super High Dense Cell Design Low On-Resistance Reliable and Rugged SOP-8 Lead Free and Green Available Applications DC/DC Converters N-Channel MOSFET Absolute Maximum Ratin... See More ⇒

 9.1. Size:299K  ruichips
 ru20120l.pdf pdf_icon

RU20130L

RU20120L N-Channel Advanced Power MOSFET Features Pin Description 20V/120A, RDS (ON) =2.3m (Typ.)@VGS=10V RDS (ON) =4.2m (Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) TO252 Applications Power Management DC-DC Converters N-... See More ⇒

Detailed specifications: RU1HL13R, RU1HL8L, RU1HP55R, RU1HP60R, RU1J002YN, RU1Z120R, RU1Z200Q, RU20120L, BS170, RU2013H, RU2020H, RU2021H, RU205B, RU206G, RU2090M, RU20D10H, RU20E60L

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