IRFS833 PDF and Equivalents Search

 

IRFS833 Specs and Replacement

Type Designator: IRFS833

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO220F

IRFS833 substitution

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IRFS833 datasheet

 ..1. Size:308K  1
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IRFS833

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IRFS833

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 8.2. Size:888K  fairchild semi
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IRFS833

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 8.3. Size:499K  samsung
 irfs830a.pdf pdf_icon

IRFS833

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 1.169 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V... See More ⇒

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Detailed specifications: IRFS820A , IRFS821 , IRFS822 , IRFS823 , IRFS830 , IRFS830A , IRFS831 , IRFS832 , AON7403 , IRFS840 , IRFS840A , IRFS841 , IRFS842 , IRFS843 , IRFS9130 , IRFS9131 , IRFS9132 .

Keywords - IRFS833 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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