All MOSFET. RU30300R Datasheet

 

RU30300R Datasheet and Replacement


   Type Designator: RU30300R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 300 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 1840 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO-220
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RU30300R Datasheet (PDF)

 ..1. Size:301K  ruichips
ru30300r.pdf pdf_icon

RU30300R

RU30300RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/300A,RDS (ON) =1.7m (Typ.) @ VGS=10V,IDS=75A Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche testedTO-220 175C Operating Temperature Lead Free and Green AvailableApplications DC/DC Converters UPSN-Channel MOSFETAbsolute Maximum Ra

 8.1. Size:330K  ruichips
ru3030m2.pdf pdf_icon

RU30300R

RU3030M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/30A, RDS (ON) =10m(Typ.)@VGS=10VDDD RDS (ON) =15m(Typ.)@VGS=4.5V D Super High Dense Cell Design Fast Switching Speed Low gate Charge 100% avalanche tested GSSS Lead Free and Green Devices Available (RoHS Compliant)PIN1PIN1PDFN3333DApplications Switching Applic

 8.2. Size:733K  ruichips
ru3030m3.pdf pdf_icon

RU30300R

RU3030M3N-Channel Advanced Power MOSFETFeatures Pin Description 30V/30A,RDS (ON) =7m(Typ.)@VGS=10VRDS (ON) =10m(Typ.)@VGS=4.5V Uses Ruichips advanced TrenchTM technologyGS Excellent QgxRDS(on) product(FOM)SSS Reliable and RuggedR li bl d R d 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)DDPIN1DDDFN

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History: DMJ70H601SV3 | IRFB5620 | WMM07N65C4 | SSW65R190S2 | APT10021JFLL | NCE30P12BS | SM4186T9RL

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