All MOSFET. RU3040M2 Datasheet

 

RU3040M2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU3040M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: PDFN3333

 RU3040M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU3040M2 Datasheet (PDF)

 ..1. Size:338K  ruichips
ru3040m2.pdf

RU3040M2
RU3040M2

RU3040M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/40A,RDS (ON) =5.8m(Typ.)@VGS=10VDDDRDS (ON) =8.2m(Typ.)@VGS=4.5VDRDS (ON) =16.8m(Typ.) @VGS=2.5V Super High Dense Cell Design Fast Switching Speed Low gate Charge GSSS 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compliant)PIN1PDFN3333D

 7.1. Size:778K  ruichips
ru3040m3.pdf

RU3040M2
RU3040M2

RU3040M3N-Channel Advanced Power MOSFETFeatures Pin Description 30V/40A,RDS (ON) =5m(Typ.)@VGS=10VRDS (ON) =6.5m(Typ.)@VGS=4.5VGSS Uses Ruichips advanced TrenchTM technologyS Excellent QgxRDS(on) product(FOM)D Reliable and RuggedR li bl d R dDD 100% avalanche testedDD Lead Free and Green Devices Available (RoHS Compliant)PIN1DF

 7.2. Size:306K  ruichips
ru3040m.pdf

RU3040M2
RU3040M2

RU3040M N-Channel Advanced Power MOSFET Features Pin Description 30V/40A, RDS (ON) =12m(Typ.)@VGS=10V RDS (ON) =17.5m(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested PDFN5060 Lead Free and Green Devices Available (RoHS Compliant) Applications DC/DC Conversion Switching Application N-Channel MO

 9.1. Size:247K  ruichips
ru304b.pdf

RU3040M2
RU3040M2

RU304BN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/4A,RDS (ON) =44m (Typ.) @ VGS=4.5VRDS (ON) =53m (Typ.) @ VGS=2.5V Low RDS (ON) Super High Dense Cell Design Reliable and RuggedSOT-23 Lead Free and Green AvailableApplications Load/System SwitchN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitComm

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