All MOSFET. IRFS840A Datasheet

 

IRFS840A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFS840A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 44 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 4.6 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 1190 pF

Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm

Package: TO220F

IRFS840A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFS840A Datasheet (PDF)

1.1. irfs840a.pdf Size:511K _samsung

IRFS840A
IRFS840A

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Uni

5.1. irf830b irfs830b.pdf Size:888K _fairchild_semi

IRFS840A
IRFS840A

November 2001 IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 27 nC) planar, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been especially tailored to

5.2. irfs820a.pdf Size:502K _samsung

IRFS840A
IRFS840A

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 2.000 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

5.3. irfs8xx irfs9xxx sss4n60 sss6n60.pdf Size:26K _samsung

IRFS840A



5.4. irfs830a.pdf Size:499K _samsung

IRFS840A
IRFS840A

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V ? Lower RDS(ON) : 1.169 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Uni

Datasheet: IRFS822 , IRFS823 , IRFS830 , IRFS830A , IRFS831 , IRFS832 , IRFS833 , IRFS840 , 2SK117 , IRFS841 , IRFS842 , IRFS843 , IRFS9130 , IRFS9131 , IRFS9132 , IRFS9133 , IRFS9140 .

 


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