RU30P5H
MOSFET. Datasheet pdf. Equivalent
Type Designator: RU30P5H
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 5.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 11
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045
Ohm
Package:
SOP-8
RU30P5H
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU30P5H
Datasheet (PDF)
..1. Size:303K ruichips
ru30p5h.pdf 
RU30P5HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -30V/-5.5A,RDS (ON) =38m (Typ.) @ VGS=-10VRDS (ON) =55m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications Power Management.P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA
8.1. Size:284K ruichips
ru30p5d.pdf
RU30P5DP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -30V/-5.5A,RDS (ON) =38m (Typ.) @ VGS=-10VRDS (ON) =55m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOT-223Applications Power Management.P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (
9.1. Size:338K ruichips
ru30p4c.pdf
RU30P4CP-Channel Advanced Power MOSFETFeatures Pin Description -25V/-4A, RDS (ON) =45m(Typ.)@VGS=-10VD RDS (ON) =55m(Typ.)@VGS=-4.5V RDS (ON) =75m(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)SSOT23-3DApplications Load SwitchDC/DC Converter
9.2. Size:658K ruichips
ru30p40m3.pdf
RU30P40M3P-Channel Advanced Power MOSFETFeatures Pin Description -30V/-40A,RDS (ON) =7.5m(Typ.)@VGS=-10VGSSRDS (ON) =11.5m(Typ.)@VGS=-4.5VS Uses Ruichips advanced TrenchTM technology D Excellent QgxRDS(on) product(FOM) Reliable and Rugged DDDD 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)PIN1DFN3030DA
9.3. Size:338K ruichips
ru30p3b.pdf
RU30P3BP-Channel Advanced Power MOSFETFeatures Pin Description -30V/-3.5A, RDS (ON) =50m(Typ.)@VGS=-10VD RDS (ON) =80m(Typ.)@VGS=-4.5V Low On-Resistance Super High Dense Cell Design Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)SSOT23DApplications Load SwitchGSP-Channel MOSFETAbsolute Maximum RatingsSym
9.4. Size:339K ruichips
ru30p4b.pdf
RU30P4BP-Channel Advanced Power MOSFETFeatures Pin Description -25V/-4A, RDS (ON) =50m(Typ.)@VGS=-10VD RDS (ON) =60m(Typ.)@VGS=-4.5V RDS (ON) =80m(Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell DesignG Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)SSOT23DApplications Load SwitchGSP-Channel MOSFE
9.5. Size:340K ruichips
ru30p4c6.pdf
RU30P4C6P-Channel Advanced Power MOSFETFeatures Pin Description -30V/-4A,S RDS (ON) =50m(Typ.)@VGS=-10V RDS (ON) =75m(Typ.)@VGS=-4.5VD Low On-ResistanceD Super High Dense Cell Design Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)DDSOT23-6DApplications Load SwitchDC/DC ConverterGSP-Channel MOSFET
9.6. Size:330K ruichips
ru30p4h.pdf
RU30P4HP-Channel Advanced Power MOSFETFeatures Pin Description -30V/-5A,D RDS (ON) =50m(Typ.)@VGS=-10VD RDS (ON) =80m(Typ.)@VGS=-4.5VD Low On-ResistanceD Super High Dense Cell Design Reliable and RuggedG Lead Free and Green Devices Available (RoHS Compliant)SSpin1SSOP-8D D D D(8) (6)(7) (5)ApplicationsPower managementLoa
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